Presented at the 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, June 14 2018. In this work, novel, high-throughput metrology methods are used to perform a detailed performance loss analysis of ≈400 industrial crystalline silicon solar cells. The characterization sequence includes a non-destructive transfer length method (TLM) measurement technique featuring circular TLM structures hidden within the busbar region of the cells. It also includes a very fast external quantum efficiency and reflectance measurement technique. More traditional measurements, like illuminated current-voltage, Suns- VOC, and photoluminescence imaging are also used to carry out the loss analysis. The variance of the individual loss parameters and their impact on cell performance are investigated.